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inchange semiconductor product specification silicon npn power transistors 2SC1678 description with to-220 package low collector saturation voltage applications 27mhz rf power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 65 v v ceo collector-emitter voltage open base 65 v v ebo emitter-base voltage open collector 4 v i c collector current 3 a i b base current 0.4 a i e emitter current -3 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1678 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c =0.5a; i b =50m a 1.0 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 65 v v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 65 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 4 v i cbo collector cut-off current v cb =30v;i e =0 10 a i ceo collector cut-off current v ce =20v;i b =0 100 a h fe-1 dc current gain i c =0.5a ; v ce =5v 15 h fe-2 dc current gain i c =1.5a ; v ce =5v 10 c ob collectpr output capacitance i e =0 ; v cb =10v, f=1mhz 30 pf f t transition frequency i c =0.1a ; v ce =5v 100 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SC1678 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)

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